Samsung Beats TSMC In Race To Build 3-Nanometer Chips

Samsung has beaten Taiwan Semiconductor Manufacturing Co. (TSMC) in the race to build 3-nanometer (nm) gate all around (GAA) chipsets and it has already shipped out the record-breaking chips to its customers, Alan Friedman reported for PhoneArena.

Photo Insert: Samsung (via wccftech) has become the first to start shipping 3nm GAA chipsets, beating rival TSMC.

Under Moore's Law, which was advanced by semiconductor legend Gordon Moore, the co-founder of Fairchild Semiconductor and Intel, theorized in 1965 that the number of transistors inside an integrated circuit (IC) would double every year.

He revised the theory in the 1970s by stating that the transistor count would double every other year.

The smaller the process node, the larger the number of transistors that can fit inside an IC, Friedman reported. This is important because the higher the transistor count, the more powerful and energy-efficient a chip is.

Samsung started shipping its 10nm SoCs in 2016. In 2018 it started mass production of its 7nm chipsets.

By 2020, Samsung started mass production of 5nm chipsets, and now Samsung (via wccftech) has become the first to start shipping 3nm GAA chipsets, beating rival TSMC. Not only is Samsung the first to deliver 3nm chips, but it is also the first to ship these chips equipped with GAA transistors.

Samsung is the first to start shipping 3nm GAA chipsets which replaced the previous generation 5nm FinFET chips. With GAA, there is more control over current flow resulting in greater power efficiency.

TSMC is still using the previous generation FinFET transistor design for its 3nm SoCs which it will start shipping during the second half of this year. The world's leading independent foundry will start using GAA with its 2nm process node which it hopes to start delivering to customers in 2026.

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